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| 2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK4012 Switching Regulator Applications Low drain-source ON-resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0. 33 (typ.) : |Yfs| = 8.5 S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 13 52 45 1170 13 4.5 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight: 1.7 (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C / W C / W 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 11.8 mH, RG = 25 , IAR = 13 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2006-11-06 2SK4012 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 13 A Duty < 1%, tw = 10 s = 10 V VGS 0V 15 ID = 6.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min -- 30 -- 500 2.0 -- 4.0 -- -- -- -- Typ. -- -- -- -- -- 0.33 8.5 2400 18 220 25 Max 10 -- 100 -- 4.0 0.4 -- -- -- -- -- pF Unit A V A V V S Turn-on time Switching time Fall time RL = 31 VDD 200 V - -- 70 -- ns -- 10 -- Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge -- -- -- -- 95 50 30 20 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V dIDR / dt = 100 A / s Min -- -- -- -- -- Typ. -- -- -- 1000 11 Max 13 52 -1.7 -- -- Unit A A V ns C Marking K4012 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK4012 ID - VDS 10 COMMON SOURCE Tc = 25C PULSE TEST 10 8 6 20 8,10 ID - VDS COMMON SOURCE Tc = 25C PULSE TEST DRAIN CURRENT ID (A) 6 5.25 4 5 2 4.75 4.5 VGS = 4 V 0 0 1 2 3 4 5 DRAIN CURRENT ID (A) 8 16 12 6 5.75 8 5.5 5.25 4 5 4.75 4.5 0 0 10 20 30 VGS = 4 V 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID - VGS 50 VDS - VGS 10 DRAIN CURRENT ID (A) 40 DRAIN-SOURCE VOLTAGE VDS (V) COMMON SOURCE VDS = 20 V PULSE TEST Tc = -55C COMMON SOURCE Tc = 25C PULSE TEST 8 25 30 100 20 6 4 13 10 2 6 ID = 3 A 0 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID 100 RDS (ON) - ID 1 FORWARD TRANSFER ADMITTANCE Yfs (S) Tc = -55C 25 10 100 DRAIN-SOURCE ON-RESISTANCE RDS (ON) () COMMON SOURCE VDS = 20 V PULSE TEST COMMON SOURCE Tc = 25C PULSE TEST VGS = 10 V 15 1 1 10 100 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-06 2SK4012 RDS (ON) - Tc COMMON SOURCE VGS = 10 V PULSE TEST IDR - VDS 100 0.8 DRAIN REVERSE CURRENT IDR (A) 1.0 DRAIN-SOURCE ON-RESISTANCE RDS (ON) () COMMON SOURCE Tc = 25C PULSE TEST 10 0.6 ID = 13A 0.4 3 0.2 6 1 10 5 3 1 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) C - VDS 10000 5 Ciss Vth - Tc Vth (V) GATE THRESHOLD VOLTAGE (pF) 4 1000 CAPACITANCE C 3 Coss 2 100 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 10 1 Crss 100 0 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc 50 500 DYNAMIC INPUT/OUTPUT CHARACTERISTICS DRAIN-SOURCE VOLTAGE VDS (V) COMMON SOURCE ID = 13 A Tc = 25C PULSE TEST VDS 20 DRAIN POWER DISSIPATION PD (W) 40 400 400 16 20 200 200 200 8 10 100 VGS VDS = 100 V 4 0 0 40 80 120 160 200 0 0 20 40 60 80 0 100 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2006-11-06 Gate-source voltage 30 300 VDS = 100 V 400 12 VGS (V) 2SK4012 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth - tw 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 PDM t SINGLE PULSE 0.01 T Duty = t/T Rth (ch-c) = 2.78C/W 0.01 0.001 10 100 1 10 100 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 ID max (PULSE) * 1200 EAS - Tch AVALANCHE ENERGY EAS (mJ) 100 s * ID max (CONTINUOUS) * 10 1 ms * 1000 800 DRAIN CURRENT ID (A) 600 1 DC OPERATION Tc = 25C 400 200 0.1 *: SINGLE NONREPETITIVE PULSE Tc = 25C Curves must be derated linearly with increase in temperature 0.01 1 10 VDSS max 100 1000 0 25 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (C) 15 V -15 V BVDSS IAR VDD VDS DRAIN-SOURCE VOLTAGE VDS (V) TEST CIRCUIT RG = 25 VDD = 90 V, L = 11.8 mH WAVEFORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-06 2SK4012 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06 |
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